Dimitri A. Antoniadis

Antoniadis made pioneering contributions to metal-oxide semiconductor field-effect transistors (MOSFETS) used for amplifying and switching electrical signals. Modern microchips contain billions of them. His work in the 1980's on MOS devices with deep-submicron dimensions proved the feasibility of sub-100-nm MOSFETs and included the first demonstration of electron injection velocities exceeding saturation values. As director for twelve years of MIT's Materials, Structures, and Devices Center, he helped to define the pathway of future microelectronics through scaling transistors to their ultimate limit and via interdisciplinary exploration of new-frontier devices. His innovations contributed to the modern semiconductor industry and the information technology that revolutionized our society.